| PART |
Description |
Maker |
| FDZ4670 |
N-Channel PowerTrench?MOSFET BGA 30V, 25A, 2.5mΩ
N-Channel PowerTrench㈢MOSFET BGA 30V, 25A, 2.5mヘ
|
Fairchild Semiconductor
|
| PUMA2F16006M-90 PUMA2F16006-90 PUMA2F16006M-120E P |
32-Tap, Volatile DPP with I2C/DEC, Up/Down Interface, TSSOP
BGA, ROHS-A, IND TEMP, T&R(ARM)
BGA,GREEN,IND TEMP,T&R(ARM)
x32 Flash EEPROM Module X32号，闪存EEPROM模块
EEPROM EEPROM
|
Infineon Technologies AG
Amphenol Tuchel
|
| FDZ291P06 FDZ291P |
P-Channel 1.5 V Specified PowerTrench? BGA MOSFET
P-Channel 1.5 V Specified PowerTrench㈢ BGA MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FDZ206P |
P-Channel 2.5V Specified PowerTrench BGA MOSFET
From old datasheet system
P-Channel 2.5V Specified PowerTrench® BGA MOSFET
|
Fairchild Semiconductor
|
| GWIXP455AAC EWIXP455AACT EWIXP465AAC EWIXP465AAD E |
400 MHz, RISC PROCESSOR, PBGA544 PLASTIC, BGA-544
400 MHz, RISC PROCESSOR, PBGA544 ROHS COMPLIANT, PLASTIC, BGA-544
533 MHz, RISC PROCESSOR, PBGA544 ROHS COMPLIANT, PLASTIC, BGA-544
266 MHz, RISC PROCESSOR, PBGA544 ROHS COMPLIANT, PLASTIC, BGA-544
266 MHz, RISC PROCESSOR, PBGA544 PLASTIC, BGA-544
667 MHz, RISC PROCESSOR, PBGA544 ROHS COMPLIANT, PLASTIC, BGA-544
533 MHz, RISC PROCESSOR, PBGA544 PLASTIC, BGA-544
|
Intel, Corp.
INTEL CORP
|
| AS7C251MPFD18A-133BC AS7C251MPFD18A-133BCN |
1M X 18 STANDARD SRAM, 3.8 ns, PBGA165 BGA-165
1M X 18 STANDARD SRAM, 3.8 ns, PBGA165 LEAD FREE, BGA-165
|
Alliance Semiconductor, Corp.
|
| UPD44325084F5-E37-EQ2-A UPD44325084F5-E50-EQ2-A UP |
4M X 8 QDR SRAM, 0.45 ns, PBGA165 13 X 15 MM, LEAD FREE, PLASTIC, BGA-165
4M X 8 QDR SRAM, 0.45 ns, PBGA165 13 X 15 MM, PLASTIC, BGA-165
|
NEC, Corp.
|
| FDZ2553NZ |
Monolithic Common Drainl N-Channel 2.5V Specified PowerTrench BGA MOSFET
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench BGA MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| MT49H8M32BM-4 MT49H8M32FM-4 |
8M X 32 DDR DRAM, PBGA144 11 X 18.50 MM, LEAD FREE, MICRO, BGA-144
8M X 32 DDR DRAM, PBGA144 11 X 18.50 MM, MICRO, BGA-144
|
NEC, Corp.
|
| IDT71V67613S200BQ IDT71V67613S183BG IDT71V67613S20 |
256K X 36 CACHE SRAM, 3.1 ns, PBGA165 13 X 15 MM, FINE PITCH, BGA-165
256K X 36 CACHE SRAM, 3.3 ns, PBGA119 14 X 22 MM, PLASTIC, BGA-119
256K X 36 CACHE SRAM, 3.1 ns, PQFP100 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
256K X 36 CACHE SRAM, 3.3 ns, PQFP100 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
256K X 36 CACHE SRAM, 3.3 ns, PBGA165 13 X 15 MM, FINE PITCH, BGA-165
256K X 36 CACHE SRAM, 3.1 ns, PBGA119 14 X 22 MM, PLASTIC, BGA-119
|
Integrated Device Technology, Inc.
|
| K7P401822B-HC16 K7P401822B-HC20 K7P401822B-HC25 K7 |
SENSOR DIFF VACUUM GAGE 10 H2O 128K × 36
128Kx36 & 256Kx18 Synchronous Pipelined SRAM 128K × 36
256K X 18 STANDARD SRAM, 2.7 ns, PBGA119 14 X 22 MM, BGA-119
128K X 36 STANDARD SRAM, 2.7 ns, PBGA119 14 X 22 MM, BGA-119
256K X 18 STANDARD SRAM, 3 ns, PBGA119 14 X 22 MM, BGA-119
SENSOR DIFF VACUUM GAGE 1PSI
SENSOR ABSOLUTE 0-15PSIA
128Kx36 & 256Kx18 Synchronous Pipelined SRAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| AT49BV160-90CI AT49BV161-70CI AT49BV161-90CI AT49B |
EEPROM|FLASH|1MX16/2MX8|CMOS|BGA|48PIN|PLASTIC
EEPROM|FLASH|1MX16/2MX8|CMOS|BGA|45PIN|PLASTIC 的EEPROM | FLASH动画| 1MX16/2MX8 |的CMOS | BGA封装| 45PIN |塑料
|
ATM Electronic, Corp.
|
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